Single Choice

The order of $$ \pi $$ bond formation tendency is $$Si-O < P-O < S-O < Cl-O $$.

ABoth Assertion and Reason are correct and Reason is the correct explanation for Assertion
Correct Answer
BBoth Assertion and Reason are correct but Reason is not the correct explanation for Assertion
CAssertion is correct but Reason is incorrect
DBoth Assertion and Reason are incorrect

Solution

The order of $$\pi$$ π bond formation tendency is $$Si-O
This is because, with a decrease in the size from $$Si\rightarrow Cl$$, the effectiveness of the sideways overlap increases, and on moving from left to right along a period, the effective nuclear charge generally increases and consequently the energy of $$3d$$- orbital decreases from $$Si\rightarrow Cl$$.

Therefore, both Assertion and Reason are correct and Reason is the correct explanation for Assertion.

Hence, option (A) is the correct answer.


SIMILAR QUESTIONS

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The bond dissociation energy of $$F_{2}$$ is very low due to:

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Select the correct order of bond energy for $$PH_3,\, NH_3$$ and $$NF_3,\, PF_3$$.

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The maximum bond energy is present in?

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Which of the following bonds have lowest bond energy?

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The correct order of increasing C-O bond strength of $$CO,CO_{3}^{2-}, CO_{2}$$ is :

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Which of the following compound possesses the $$C-H$$ bond with the lowest bond dissociation energy?

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Among the $$C-X$$ bonds, the correct bond energy order is:

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What is meant by the term average bond enthalpy? Why is there difference in bond enthalpy of $$O-H$$ bond in ethanol $$ (C_2H_5OH) $$ and water ?

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