Semiconductors and Electronic Devices
In a p-n junction diode, the current I can be expressed as $$I = I_0\,exp\, \left( \dfrac{eV}{2K_BT} - 1 \right)$$, where $$I_0$$ is called the reverse saturation current, $$V$$ is the voltage across the diode and is positive for forward bias and negative for reverse bias, and $$I$$ is the current through the diode, $$k_B$$ is the Boltzmann constant $$(8.6 \times 10^{-5} eV/K)$$ and $$T$$ is the absolute temperature. If for a given diode $$I_o = 5 \times 10^{-12}$$$$ A$$ and $$T = 300\ K$$, then
(a) What will be the forward current at a forward voltage of $$0.6\ V$$?(b) What will be the increase in the current if the voltage across the diode is increased to $$0.7\ V$$?(c) What is the dynamic resistance?(d) What will be the current if reverse bias voltage changes from $$1\ V$$ to $$2\ V$$?
Semiconductors and Electronic Devices
The circuit shown in the figure contains two diodes each with a forward resistance of $$50\Omega$$ with infinite backwards resistance. If the battery voltage is 6V, the current through the $$100\Omega$$(in amperes) is
Semiconductors and Electronic Devices
In the grid cicuit of a triode, a signal $$E=2\sqrt{2} \cos \omega t$$ is applied. If $$\mu = 14$$ and $$r_P = 10 k\Omega$$, then rms current flowing through $$R_L = 12 k\Omega$$ will be :
Semiconductors and Electronic Devices
If $$R_p=7k\omega $$ , $$g_m=2.5 milli mho$$ , then on increasing plate voltage by $$50 V$$, how much the grid voltage is changed so that plate current remains the same?
Semiconductors and Electronic Devices
In space charge limited region, the plate current in a diode is $$10 \ mA$$ for plate voltage $$150 V$$. If the plate voltage is increased to $$600 V$$, then the plate current will be:-
Semiconductors and Electronic Devices
Ge and Si diodes conduct at 0.3 V and 0.7 V respectively. In the following figure if Ge diode connection is reversed, the value of V$$_{0}$$ changes by
Semiconductors and Electronic Devices
Before the saturation state of a diode at the plate voltage of $$400\ V$$ and $$200\ V$$ respectively the currents are $$i_1$$ and $$i_2$$ respectively. The ratio $$i_1 / i_2$$ will be
Semiconductors and Electronic Devices
The magnitude of saturation photoelectric current depends upon
Semiconductors and Electronic Devices
The reverse saturation current in a p-n junction diode is due to only the
Semiconductors and Electronic Devices
On increasing reverse voltage in a p-n junction diode, the value of reverse current will
