Single Choice

The reverse saturation current in a p-n junction diode is due to only the

Aminority carriers
Correct Answer
Bmajority carriers
Cacceptor ions
Ddonor ions

Solution

The reverse saturation current caused in a p-n junction diode is caused by minority carriers. The rupture of covalent bonds create the minority carriers in the material and it solely depends on the temperature of the material. When the temperature is maintained at a certain constant value, the generation of minority carriers is constant. The drift current due o the flow of minority carriers is called the reverse saturation current and is independent of the value of applied bias voltage.

SIMILAR QUESTIONS

Semiconductors and Electronic Devices

In a p-n junction diode, the current I can be expressed as $$I = I_0\,exp\, \left( \dfrac{eV}{2K_BT} - 1 \right)$$, where $$I_0$$ is called the reverse saturation current, $$V$$ is the voltage across the diode and is positive for forward bias and negative for reverse bias, and $$I$$ is the current through the diode, $$k_B$$ is the Boltzmann constant $$(8.6 \times 10^{-5} eV/K)$$ and $$T$$ is the absolute temperature. If for a given diode $$I_o = 5 \times 10^{-12}$$$$ A$$ and $$T = 300\ K$$, then (a) What will be the forward current at a forward voltage of $$0.6\ V$$?(b) What will be the increase in the current if the voltage across the diode is increased to $$0.7\ V$$?(c) What is the dynamic resistance?(d) What will be the current if reverse bias voltage changes from $$1\ V$$ to $$2\ V$$?

Semiconductors and Electronic Devices

The circuit shown in the figure contains two diodes each with a forward resistance of $$50\Omega$$ with infinite backwards resistance. If the battery voltage is 6V, the current through the $$100\Omega$$(in amperes) is

Semiconductors and Electronic Devices

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Semiconductors and Electronic Devices

If $$R_p=7k\omega $$ , $$g_m=2.5 milli mho$$ , then on increasing plate voltage by $$50 V$$, how much the grid voltage is changed so that plate current remains the same?

Semiconductors and Electronic Devices

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Semiconductors and Electronic Devices

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Semiconductors and Electronic Devices

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Semiconductors and Electronic Devices

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Semiconductors and Electronic Devices

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Semiconductors and Electronic Devices

On increasing reverse voltage in a p-n junction diode, the value of reverse current will

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