Semiconductors and Electronic Devices
In reverse bias, pn-junction diode depletion layer width:
Direction of electric field in P-N junction diode is
The P and N sides of the diode are electrically neutral. Due to diffusion of electrons from N to P side and diffusion of holes from P to N side, the N and P sides obtain positive and negative charges respectively. Thus an electric field exists between them, direction being from positive charge to negative charges, thus N-side to P-side.
This is called potential barrier formation.
In reverse bias, pn-junction diode depletion layer width:
The drift current in a p-n junction is $$20\cdot 0 \mu \,A$$. Estimate the number of electrons crossing a cross section per second in the depletion region.
In a p−type semi-conductor, the majority carriers of current are:
The depletion layer in a $$p-n$$ junction diode consists of layer of:
What is 'depletion region' in a semi conductor diode?
In a junction diode, the holes are due to
The reason of current flow in p-n junction in forward bias is:
The depletion layer in the p-n junction region is caused by
If the forward voltage in a semiconductor is doubled, the width of depletion layer will
On adjusting the P-N junction diode in forward biased: