Semiconductors and Electronic Devices
Direction of electric field in P-N junction diode is
In reverse bias, pn-junction diode depletion layer width:
In reverse biasing, the positive terminal of the battery is connected to the n-type whereas the negative terminal is connected to the p-type junction. So the positive terminal tend to pull the electrons (near to the depletion layer) in n-type towards itself whereas the negative terminal pulls the holes towards itself which results in increase in the width of depletion layer.
Direction of electric field in P-N junction diode is
The drift current in a p-n junction is $$20\cdot 0 \mu \,A$$. Estimate the number of electrons crossing a cross section per second in the depletion region.
In a p−type semi-conductor, the majority carriers of current are:
The depletion layer in a $$p-n$$ junction diode consists of layer of:
What is 'depletion region' in a semi conductor diode?
In a junction diode, the holes are due to
The reason of current flow in p-n junction in forward bias is:
The depletion layer in the p-n junction region is caused by
If the forward voltage in a semiconductor is doubled, the width of depletion layer will
On adjusting the P-N junction diode in forward biased: