Semiconductors and Electronic Devices
Direction of electric field in P-N junction diode is
If the forward voltage in a semiconductor is doubled, the width of depletion layer will
P-N junction -
When P type semiconductor is mixed with N - type semiconductor, P-N junction formed
Wherein
There is very thin region (of the order of micro meter) called depution region.
width of depletion region $$\propto \dfrac{1}{V}$$
V=Applied potential
i.e. If V is doubled width of depletion region will become half.
Direction of electric field in P-N junction diode is
In reverse bias, pn-junction diode depletion layer width:
The drift current in a p-n junction is $$20\cdot 0 \mu \,A$$. Estimate the number of electrons crossing a cross section per second in the depletion region.
In a p−type semi-conductor, the majority carriers of current are:
The depletion layer in a $$p-n$$ junction diode consists of layer of:
What is 'depletion region' in a semi conductor diode?
In a junction diode, the holes are due to
The reason of current flow in p-n junction in forward bias is:
The depletion layer in the p-n junction region is caused by
On adjusting the P-N junction diode in forward biased: