Single Choice

The depletion layer in a $$p-n$$ junction diode consists of layer of:

Apositively charged donors on the $$p-$$ side and negatively charged acceptors on the $$n-$$ side
Bnegatively charged donors on the $$p-$$ side and positively charged acceptors on the $$n-$$ side`
Cpositively charged donors on the $$n-$$ side and negatively charged acceptors on the $$p-$$ side
Correct Answer
Dnegatively charged donors on the $$n-$$ side and positively charged acceptors on the $$p-$$ side

Solution

SIMILAR QUESTIONS

Semiconductors and Electronic Devices

Direction of electric field in P-N junction diode is

Semiconductors and Electronic Devices

In reverse bias, pn-junction diode depletion layer width:

Semiconductors and Electronic Devices

The drift current in a p-n junction is $$20\cdot 0 \mu \,A$$. Estimate the number of electrons crossing a cross section per second in the depletion region.

Semiconductors and Electronic Devices

In a p−type semi-conductor, the majority carriers of current are:

Semiconductors and Electronic Devices

What is 'depletion region' in a semi conductor diode?

Semiconductors and Electronic Devices

In a junction diode, the holes are due to

Semiconductors and Electronic Devices

The reason of current flow in p-n junction in forward bias is:

Semiconductors and Electronic Devices

The depletion layer in the p-n junction region is caused by

Semiconductors and Electronic Devices

If the forward voltage in a semiconductor is doubled, the width of depletion layer will

Semiconductors and Electronic Devices

On adjusting the P-N junction diode in forward biased:

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