Semiconductors and Electronic Devices
Direction of electric field in P-N junction diode is
The reason of current flow in p-n junction in forward bias is:
During formation of p-n junction p-side has excess holes and n-side has excess electrons. Hence, current tends to flow due to diffusion from p-side to n-side. This does not happen without an external bias because of the potential barrier at the junction.
When p-side is given a potential higher than the n-side, it aids in the flow of this diffusion current and hence, current flows.
Direction of electric field in P-N junction diode is
In reverse bias, pn-junction diode depletion layer width:
The drift current in a p-n junction is $$20\cdot 0 \mu \,A$$. Estimate the number of electrons crossing a cross section per second in the depletion region.
In a p−type semi-conductor, the majority carriers of current are:
The depletion layer in a $$p-n$$ junction diode consists of layer of:
What is 'depletion region' in a semi conductor diode?
In a junction diode, the holes are due to
The depletion layer in the p-n junction region is caused by
If the forward voltage in a semiconductor is doubled, the width of depletion layer will
On adjusting the P-N junction diode in forward biased: