Single Choice

In a $$P-N$$ junction diode if $$P$$ region is heavily doped than $$n$$ region then the depletion layer is

AGreater in $$P$$ region
BGreater in $$N$$ region
Correct Answer
CEqual in both region
DNo depletion layer is formed in this case

Solution

In a P−N junction diode if P region is heavily doped than n region then the depletion layer is more in less doped side.


SIMILAR QUESTIONS

Semiconductors and Electronic Devices

Direction of electric field in P-N junction diode is

Semiconductors and Electronic Devices

In reverse bias, pn-junction diode depletion layer width:

Semiconductors and Electronic Devices

The drift current in a p-n junction is $$20\cdot 0 \mu \,A$$. Estimate the number of electrons crossing a cross section per second in the depletion region.

Semiconductors and Electronic Devices

In a p−type semi-conductor, the majority carriers of current are:

Semiconductors and Electronic Devices

The depletion layer in a $$p-n$$ junction diode consists of layer of:

Semiconductors and Electronic Devices

What is 'depletion region' in a semi conductor diode?

Semiconductors and Electronic Devices

In a junction diode, the holes are due to

Semiconductors and Electronic Devices

The reason of current flow in p-n junction in forward bias is:

Semiconductors and Electronic Devices

The depletion layer in the p-n junction region is caused by

Semiconductors and Electronic Devices

If the forward voltage in a semiconductor is doubled, the width of depletion layer will

Contact Details