Semiconductors and Electronic Devices
Direction of electric field in P-N junction diode is
In a $$P-N$$ junction diode if $$P$$ region is heavily doped than $$n$$ region then the depletion layer is
In a P−N junction diode if P region is heavily doped than n region then the depletion layer is more in less doped side.
Direction of electric field in P-N junction diode is
In reverse bias, pn-junction diode depletion layer width:
The drift current in a p-n junction is $$20\cdot 0 \mu \,A$$. Estimate the number of electrons crossing a cross section per second in the depletion region.
In a p−type semi-conductor, the majority carriers of current are:
The depletion layer in a $$p-n$$ junction diode consists of layer of:
What is 'depletion region' in a semi conductor diode?
In a junction diode, the holes are due to
The reason of current flow in p-n junction in forward bias is:
The depletion layer in the p-n junction region is caused by
If the forward voltage in a semiconductor is doubled, the width of depletion layer will